1 http://www.fujielectric.com/products/semiconductor/ FGW15N120HD discrete igbt discrete igbt (high-speed v series) 1200v / 15a features low power loss low switching surge and noise high reliability, high ruggedness (rbsoa, scsoa etc.) applications uninterruptible power supply power coditionner power factor correction circuit maximum ratings and characteristics absolute maximum ratings (at t c =25c unless otherwise specifed) items symbols characteristics units remarks collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v dc collector current i c@25 31 a t c =25c,t j =150c i c@100 15 a t c =100c,t j =150c pulsed collector current i cp 45 a note *1 turn-off safe operating area - 45 a v ce 1200v,t j 175c diode forward current i f@25 22 a i f@100 12 a diode pulsed current i fp 45 a note *1 short circuit withstand time t sc 5 s v cc 600v,v ge =12v t j 150c igbt max. power dissipation p d_igbt 155 w t c =25c fwd max. power dissipation p d_fwd 75 t c =25c operating junction temperature t j -40 ~ +175 c storage temperature t stg -55 ~ +175 c note *1 : pulse width limited by tjmax. electrical characteristics (at t j = 25c unless otherwise specifed) items symbols conditions characteristics units min. typ. max. collector-emitter breakdown voltage v (br)ces i c = 50a, v ge = 0v 1200 - - v zero gate voltage collector current i ces v ce = 1200v, v ge = 0v t j =25c - - 250 a t j =175c - - 2 ma gate-emitter leakage current i ges v ce = 0v, v ge = 20v - - 200 na gate-emitter threshold voltage v ge (th) v ce = +20v, i c = 15ma 4.0 5.0 6.0 v collector-emitter saturation voltage v ce (sat) v ge = +15v, i c = 15a t j =25c - 1.8 2.34 v t j =175c - 2.3 - input capacitance c ies v ce =25v v ge =0v f=1mhz - 1365 - pf output capacitance c oes - 50 - reverse transfer capacitance c res - 45 - gate charge q g v cc = 600v i c = 15a v ge = 15v - 140 - nc turn-on delay time t d(on) t j = 25c v cc = 600v i c = 15a v ge = 15v r g = 10? l = 500h energy loss include tail and fwd reverse recovery. - 20 - ns rise time t r - 15 - turn-off delay time t d(off) - 180 - fall time t f - 35 - turn-on energy e on - 0.6 - mj turn-off energy e off - 0.8 - turn-on delay time t d(on) t j = 175c v cc = 600v i c = 15a v ge = 15v r g = 10 l = 500h energy loss include tail and fwd reverse recovery. - 25 - ns rise time t r - 17 - turn-off delay time t d(off) - 220 - fall time t f - 60 - turn-on energy e on - 1.2 - mj turn-off energy e off - 1.2 - equivalent circuit g a t e emit t er collect or
2 discrete igbt FGW15N120HD http://www.fujielectric.com/products/semiconductor/ 3 fwd characteristics description symbol conditions characteristics unit min. typ. max. forward voltage drop v f i f =12a t j =25c - 2.2 2.8 v t j =175c - 1.8 - v diode reverse recovery time t rr1 v cc =30v,i f = 1.2a -di/dt=200a/s - 33 42 ns diode reverse recovery time t rr2 v cc =600v i f =12a -di f /dt=200a/s t j =25c 0.30 - s diode reverse recovery charge q rr - 0.60 - c diode reverse recovery time t rr2 v cc =600v i f =12a -di f /dt=200a/s t j =175c - 0.55 - s diode reverse recovery charge q rr - 3.0 - c thermal resistance characteristics items symbols conditions characteristics units min. typ. max. thermal resistance, junction-ambient r th(j-a) - - - 50 c/w thermal resistance, igbt junction to case r th(j-c)_igbt - - - 0.962 thermal resistance, fwd junction to case r th(j-c)_fwd - - - 1.923
2 3 discrete igbt FGW15N120HD http://www.fujielectric.com/products/semiconductor/ characteristics (representative) s w it ch in g f r e q u e nc y f s [ k hz ] co llec t or- e mitter c o rren t : i ce [a] g r aph . 1 dc colle c to r cu r rent v s t c v ge +15v, t j 17 5 o c g r aph . 2 c o lle c t or c ur r en t vs. s w i tc h ing f req u enc y v ge = + 15v, t c 17 5 o c , v cc = 600v , d= 0. 5 , r g = 1 0 , t c =10 0 o c g r aph . 3 t y pi c al o ut p u t c h a r a c t e ris t ics ( v c e - i c ) t j = 2 5 o c g r aph . 4 t y pi c al o ut p u t c h a r a c t e ris t ics ( v c e - i c ) t j = 17 5 o c i c [a] v c e [v ] i c [a] v ce [v ] g r aph . 5 ty pi c al tr ans f er ch ar ac t er i s t ic s v ge = + 15 v i c [a] v ge [ v ] ga t e t h r e s h ol d v ol t a g e v ge ( t h ) [v ] t j [ ] c o llec t or c ur r en t i c [a ] c a s e te m p e r a t u r e [ c ] 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 17 5 0 1 0 2 0 3 0 4 0 5 0 t j 1 7 5 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 0 5 1 0 1 5 2 0 2 5 3 0 10v 8v 12v 15v v ge =20v 0 2 4 6 8 1 0 0 5 1 0 1 5 2 0 2 5 3 0 t j =175 t j =25 0 5 1 0 1 5 2 0 2 5 3 0 0 2 0 4 0 6 0 8 0 10 0 12 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 0 5 1 0 1 5 2 0 2 5 3 0 12v 8v 10v 15v v ge =20v g r aph . 6 g a t e t h resh o l d v ol t age v s . t j i c =15ma , v c e =20 v - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 0 1 2 3 4 5 6 7 8 m in . m a x . typ.
4 discrete igbt FGW15N120HD http://www.fujielectric.com/products/semiconductor/ 5 g r aph . 7 ty pi c al cap a c i t anc e v ge =0 v ,f=1mh z ,t j =2 5c g r aph . 8 typica l g at e c h ar g e v cc = 6 0 0 v, i c =15a,t j =2 5c g r aph . 9 typical s w itching time vs. i c t j = 17 5c , v cc = 600 v, l = 50 0h v ge =15v, r g =1 0 gr aph.1 0 typical s w itching time vs. r g t j = 17 5c , v cc =600v, i c = 15 a , l= 5 0 0h v ge =15 v gr aph.1 1 typical s w itching lo s ses v s . i c t j = 17 5c , v cc = 600 v, l = 50 0h v ge =15v, r g =1 0 gr aph.1 2 typical s w itching lo s ses v s . r g t j = 17 5c , v cc =600v, i c = 15 a , l= 5 0 0h v ge =15 v c [ p f ] v ce [v ] v ge [ v ] q g [ nc ] s w i t ch i ng t i m es [ nsec ] c ol l ec t or c u r re n t i c [ a ] s w i t c h ing t i m e s [ n sec ] gate r e s istor r g [ ] s w i tc h i n g e n e r gy l oss e s [ m j ] coll e c to r c u rr e n t i c [ a ] s w i tc h i n g e n e r g y l o sses [ m j ] gat e r e s is tor r g [] 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 0 1 0 1 1 0 2 1 0 3 1 0 4 c re s co e s c i e s 0 5 10 15 20 25 30 35 1 10 100 1000 t r t f t d(off) t d(on) 0 5 1 0 1 5 2 0 2 5 3 0 3 5 0 1 2 3 4 e on e off 0 5 0 1 0 0 15 0 2 0 0 2 5 0 30 0 0 5 1 0 1 5 2 0 b v cc =600v 0 10 20 30 40 50 6 0 1 10 100 1000 t r t f t d(off) t d(on) 0 1 0 2 0 3 0 4 0 5 0 6 0 0 1 2 3 4 e off e on
4 5 discrete igbt FGW15N120HD http://www.fujielectric.com/products/semiconductor/ gr aph.1 3 fw d f or w ar d v o ltage dr o p ( v f - i f ) gr aph.1 4 typical re v e rse reco v e r y chara c t er i stic s v s . i f t j = 17 5 o c , v cc = 600 v, l = 50 0h v ge =15v, r g =1 0 gr aph.1 5 typical re v e rse reco v e r y los s v s . i f t j = 17 5 o c , v cc = 600 v, l = 50 0h v ge =15v, r g =1 0 gr aph.1 6 r ev er s e bi ased s a fe op er atin g are a t j 17 5 o c , v ge = + 15v/0v, r g =1 0 c o llec t or cu r r e n t i c [a ] c o llec t or - e mi t t e r v ol t a g e : v c e [v ] i f [ a ] v f [v ] r ev erse rec o v e r y l o s s [uj ] i f [ a ] re ve rs e r e c o v e ry t i m e [ n s e c ] i f [ a ] r e v e r s e re c o v e r y ch a r g e [ u c ] 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 0 5 1 0 1 5 2 0 2 5 3 0 t j =175 t j =25 0 5 10 15 20 25 3 0 0. 0 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 0 5 1 0 1 5 2 0 2 5 3 0 0 20 0 40 0 60 0 80 0 0 1 0 20 3 0 0 2 4 6 8 q rr t rr 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 1 4 0 0 0 2 0 4 0 6 0 8 0 10 0
6 discrete igbt FGW15N120HD http://www.fujielectric.com/products/semiconductor/ 7 z t h(j-c ) [ / w ] t [ s ec ] gr aph.1 7 tr an s ient therm al re s is t ance of i gb t gr aph.1 8 tr an s ient therm al re s is t ance o f fw d z t h ( j - c ) [ /w ] t [ s ec ] 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1
6 7 discrete igbt FGW15N120HD http://www.fujielectric.com/products/semiconductor/ outline drawings, mm outview : to- 247 package con n e c ti o n gat e colle c t or emitte r dimens i o ns ar e in m i llime t e rs .
8 discrete igbt FGW15N120HD http://www.fujielectric.com/products/semiconductor/ warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of may 2011. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sur to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric co., ltd. is (or shall be deemed) granted. fuji electric co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design failsafe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2011 by fuji electric co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric co., ltd. or its sales agents before using the product. neither fuji electric co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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